Ahmad, I.B.

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Date issued

18 2010 - 2020

Results 1-18 of 18 (Search time: 0.0 seconds).

	Issue Date	Title	Author(s)
1	2013	Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array	Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. ; Apte, P.R.
2	2011	Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage	Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A.
3	2012	Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R.
4	2018	Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method	Roslan, A.F. ; Kaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Ahmad, I. ; Faizah, Z.A.N. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Mohamad, N.R. ; Hamid, A.M.A.
5	2016	Modelling of 14NM gate length La2O3-based n-type MOSFET	Mah, S.K. ; Ahmad, I. ; Ker, P.J. ; Noor Faizah, Z.A.
6	2018	Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method	Mah, S.K. ; Ahmad, I. ; Ker, P.J. ; Tan, K.P. ; Faizah, Z.A.N.
7	2018	Jsc and Voc optimization of perovskite solar cell with interface defect layer using taguchi method	Bahrudin, M.S. ; Abdullah, S.F. ; Ahmad, I. ; Zuhdi, A.W.M. ; Hasani, A.H. ; Za'Abar, F. ; Malik, M. ; Harif, M.N.
8	2015	Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device	Atan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A.
9	2010	Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
10	2012	Impact of different dose and angle in HALO structure for 45nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
11	2014	Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device	Atan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y.
12	2010	Effect of process parameter variations on threshold voltage in 45nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
13	2018	Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods	Roslan, A.F. ; Salehuddin, F. ; M Zain, A.S. ; Mansor, N. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Zarina, B.Z. ; Mohamad, N.R. ; A Hamid, A.M.
14	2011	Cobalt silicide and titanium silicide effects on nano devices	Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A.
15	2010	Characterization of a submicron PMOS in mixer circuits	Yeap, K.H. ; Ahmad, I. ; Rizman, Z.I. ; Chew, K. ; Chong, K.H. ; Yong, Y.T.
16	2010	Characterization and optimizations of silicide thickness in 45nm pMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
17	2011	Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y.
18	2010	Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.

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Ahmad, I.B.

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