Browsing by Author Salehuddin, F.
Showing results 26 to 31 of 31
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Issue Date | Title | Author(s) |
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2012 | Scaling down of the 32 nm to 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
2011 | Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. |
2014 | Statistical process modelling for 32nm high-K/metal gate PMOS device | Maheran, A.H.A. ; Noor Faizah, Z.A. ; Menon, P.S. ; Ahmad, I. ; Apte, P.R. ; Kalaivani, T. ; Salehuddin, F. |
2015 | Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. |
2018 | Threshold voltage and leakage current variability on process parameter in a 22nm PMOS Device | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Noor Faizah, Z.A. ; Mohd Zain, A.S. ; Salehuddin, F. ; Sayed, N.M. |
2016 | Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. |