Browsing by Author Ahmad, I.B.

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Issue DateTitleAuthor(s)
2008A study of lead-free BGA backward compatibility through solderability testing at component levelLeng, E.P. ; Ling, W.T. ; Amin, N. ; Ahmad, I. 
2007A study of Ni thickness effect on mechanical strength of Pb-free BGA spheres on selectively plated Ni/Au finishLeng, E.P. ; Ding, M. ; Rayos, J. ; Ahmad, I. ; Jalar, A. ; Qiang, C.C. 
2008A study of SnAgNiCo vs Sn3.8AgO.7Cu C5 lead free solder alloy on mechanical strength of BGA solder jointLeng, E.P. ; Ding, M. ; Ling, W.T. ; Amin, N. ; Ahmad, I. ; Lee, M.Y. ; Haseeb, A.S.M.A. 
2006A study on inter-metallic compound formation and structure of lead free SnAgCu solder systemAhmad, I. ; Jiun, H.H. ; Leng, E.P. ; Majlis, B.Y. ; Jalar, A. ; Wagiran, R. 
2006A study on lead free SnAgCu solder systemHoh, H.J. ; Eu, P.L. ; Ding, M. ; Ahmad, I. 
2006Advantages & challenges of cold ball pull test vs conventional ball shear test in the assessment of lead-free solder joint performanceEu, P.L. ; Ding, M. ; Hoh, H.J. ; Ahmad, I. ; Hazlinda, K. 
2004Alternative double pass dicing method for thin wafer laminated with die attach filmJiun, H.H. ; Ahmad, I. ; Jalar, A. ; Omar, G. 
2004An alternative approach to measures the application of dispatching rule in the wafer foundryChik, M.A. ; Ahmad, I. ; Jamaluddin, Md.Y. 
2004An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devicesOmar, A. ; Kamariah, S. ; Ahmad, I. 
2008An efficient first order sigma delta modulator designAmin, N. ; Guan, G.C. ; Ahmad, I. 
2008An experimental study of defect determination using pulsed thermal non-destructive testingUmar, M.Z. ; Ahmad, I. ; Hamzah, A.R. ; Abdullah, W.S.W. 
2018Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi methodBte Atanb, N. ; Majlis, B.Y. ; Ahmad, I. ; Chong, K.H. 
2010Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2011Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFETSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. 
2014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
2009BGA lead-free C5 solder system improvement by germanium addition to Sn3.5Ag and Sn-3.8Ag-0.7Cu solder alloyLeng, E.P. ; Ling, W.T. ; Amin, N. ; Ahmad, I. ; Han, T.Y. ; Chiao, C.W. ; Haseeb, A.S.M.A. 
2002Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy imagesAhmad, I. ; Omar, A. ; Hussain, A. ; Mikdad, A. 
2010Characterization and optimizations of silicide thickness in 45nm pMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2010Characterization of a submicron PMOS in mixer circuitsYeap, K.H. ; Ahmad, I. ; Rizman, Z.I. ; Chew, K. ; Chong, K.H. ; Yong, Y.T.